PART |
Description |
Maker |
MC68HC705BD3 MC68HC05BD5 M68HC705UGANG M68HC705UPG |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
FREESCALE[Freescale Semiconductor, Inc]
|
MC68HC11PH8 MC68HC711PH8 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
MOTOROLA[Motorola, Inc]
|
MC68HC05T16 MC68HC705T16 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola, Inc
|
MC68HC11PH8CFN3 MC68S11PH8CFN3 MC68S711PH8CFN3 MC6 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Freescale Semiconductor, Inc
|
MC68HC705L2B MC68HC705L2CB MC68HC705L2K MC68HC05L2 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola, Inc
|
MC68HC05X16 MC68HC705X32 |
(MC68HCx05Xxx) High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola
|
MC68HC11KW1 |
High-density complementary metal oxide semiconductor HCMOS) microcontroller unit 8-BIT, EEPROM, 4 MHz, MICROCONTROLLER, PQFP100
|
Motorola Mobility Holdings, Inc.
|
RN73C2A113KBTG RN73F1J22KBTG RN73F1J43KBTG RN73F1J |
RESISTOR SMD 113K Metal Film Resistor - RN 1/4 T2 52.3K 1% A WIDERSTAND 4.3 WIDERSTAND精密气象470R75V.063W WIDERSTAND 47K WIDERSTAND精密气象47R 75V的为0.063W WIDERSTAND PRAEZISION MET 2K2 75V 0.063W WIDERSTAND精密气象2K2 75V的为0.063W WIDERSTAND 68K WIDERSTAND68K WIDERSTAND PRAEZISION MET 15R 75V 0.063W WIDERSTAND精密气象15R 75V的为0.063W RESISTOR SMD 78R7 电阻贴片78R7 WIDERSTAND PRAEZISION MET 330R75V 0.063W WIDERSTAND精密气象330R75V0.063W
|
SCHURTER AG TE Connectivity, Ltd.
|
ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD In-System Programmable High Density PLD 200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V,温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流 High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) 0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V,温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度,高电压,标准恢复倍流整流(反向电5000V,温25℃时平均整流电流0.4A,高密度,高电压,标准恢复倍增整流器)
|
Semtech Corporation Semtech, Corp.
|
ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD In-System Programmable 3.3V SuperWIDE⑩ High Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD 110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
DK50-1.0 DK50-1.0M DK44-1.0 DK44-1.0M DK60-1.0 DK6 |
1.0mm High Density FLEX (300V, 105隆?C) 1.0mm High Density FLEX (300V, 105掳C) 1.0mm High Density FLEX (300V, 105°C)
|
Yamaichi Electronics Co., Ltd. http://
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